1 CMPA1D1E030D 30 w, 13.75 - 14.5 ghz, 40 v, gan mmic, power amplifer crees CMPA1D1E030D is a gallium nitride (gan) high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. gan-on-sic has superior properties compared to silicon, gallium arsenide or gan-on-si, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. gan hemts also offer greater power density and wider bandwidths compared to si, gaas, and gan-on-si transistors. preliminary rev 0.0 C april 2015 typical performance over 13.75-14.5 ghz (t c = 25?c) parameter 13.75 ghz 14.0 ghz 14.5 ghz units small signal gain 27 26 25 db p sat @ p in = 26 dbm 33 34 30 w p 3db backoff @ p in = 20 dbm 20 20 16 w pae @ p in = 26 dbm 24 23 22 % pae @ p in = 20 dbm 22 21 20 % note: all data in this table is based on fxtured, cw performance. features ? 27 db small signal gain ? 30 w typical p sat ? operation up to 40 v ? high breakdown voltage ? high temperature operation applications ? satellite communications uplink subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) at 25?c parameter symbol rating units conditions drain-source voltage v dss 84 v dc 25?c gate-source voltage v gs -10, +2 v dc 25?c storage temperature t stg -55, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 10 ma 25?c maximum drain current 1 i dmax 0.6 a stage 1, 25?c maximum drain current 1 i dmax 0.96 a stage 2, 25?c maximum drain current 1 i dmax 2.2 a stage 3, 25?c thermal resistance, junction to case 2 r jc 1.5 ?c/w 85?c, p diss = 94w mounting temperature (30 seconds) t s 320 ?c 30 seconds note 1 current limit for long term, reliable operation. total current when biased from top and bottom drain pads. note 2 eutectic die attach using 80/20 ausn mounted to a 20 mil thick cumocu carrier. electrical characteristics (frequency = 13.75 ghz to 14.5 ghz unless otherwise stated; t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics gate threshold v th -3.8 -2.8 -2.3 v v ds = 10 v, i d = 18.2 ma drain-source breakdown voltage v bd 84 100 C v v gs = -8 v, i d = 18.2 ma rf characteristics 2 small signal gain s21 C 27 C db v dd = 40 v, i dq = 300 ma input return loss s11 C -16 C db v dd = 40 v, i dq = 300 ma output return loss s22 C -9 C db v dd = 40 v, i dq = 300 ma power output p out1 C 50 C w v dd = 40 v, i dq = 300 ma, cw, p in = 24 dbm power output p out2 C 24 C w v dd = 40 v, i dq = 300 ma, p in = 18 dbm power added effciency pae 1 C 30 C % v dd = 40 v, i dq = 300 ma, cw , p in = 24 dbm power added effciency pae 2 C 25 C % v dd = 40 v, i dq = 300 ma, p in = 18 dbm power gain g p C 22 C db v dd = 40 v, i dq = 300 ma output mismatch stress vswr C 5 : 1 C y no damage at all phase angles, v dd = 40 v, i dq = 300 ma , p out = 25w cw notes: 1 scaled from pcm data. 2 all data pulse tested on-wafer with pulse width = 10 s, duty cycle = 0.1%. CMPA1D1E030D rev 0, preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
3 block diagram showing additional capacitors for operation over 13.75 to 14.5 ghz designator description quantity c1,c2,c3,c4,c5,c6,c7,c8,c9,c10 cap, 51pf, +/-10%, single layer, 0.030, er 3300, 100v, ni/ au termination 10 c11,c12,c13,c14 cap, 680pf, +/-10%, single layer, 0.070, er 3300, 100v, ni/au termination 4 notes: 1 the input, output and decoupling capacitors should be attached as close as possible to the die- typical distance is 5 to 10 mils with a maximum of 15 mils. 2 the mmic die and capacitors should be connected with 2 mil gold bond wires. CMPA1D1E030D rev 0, preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
4 die dimensions (units in microns) overall die size 5000 x 6000 (+0/-50) microns, die thickness 100 (+/-10) microns. all gate and drain pads must be wire bonded for electrical connection. pad number function description pad size (in) note 1 rf_in rf-input pad. matched to 50 ohm 102x252 5 2 vg1a bottom gate control for stage1. vg = -2.0 to -3.5 v 128x125 1,2 3 vg1a top gate control for stage1. vg = -2.0 to -3.5 v 128x125 1,2 4 vg2a bottom gate control for stage2. vg = -2.0 to -3.5 v 128x125 1,2 5 vg2a top gate control for stage2. vg = -2.0 to -3.5 v 128x125 1,2 6 vd1 bottom drain control for stage1. vd = 40 v 128x125 1,3 7 vd1 top drain control for stage1. vd = 40 v 128x125 1,3 8 vd2 bottom drain control for stage2. vd = 40 v 128x125 1,4 9 vd2 top drain control for stage2. vd = 40 v 128x125 1,4 10 vg3a bottom gate control for stage3. vg = -2.0 to -3.5 v 128x125 1,2 11 vg3a top gate control for stage3. vg = -2.0 to -3.5 v 128x125 1,2 12 vd3 bottom drain control for stage3. vd = 40 v 328x125 1,4 13 vd3 top drain control for stage3. vd = 40 v 328x125 1,4 14 rf_out rf-output pad. matched to 50 ohm 102x302 5 notes: 1 attach bypass capacitor to pads 2-13 per aplications circuit 2 vg1a&2a&3a top and bottom are connected internally, so it would be enough to connect either one for proper operation 3 vd1 top and bottom are not connected internally and have to be biased from both sides for proper operation 4 for current handling, it is recommended to bias vd2 and vd3 from both top and bottom sides 5 the rf input and output pads have a ground-signal-ground with a nominal pitch of 10 mil (250 um). the rf ground pads are 102 x 102 microns die assembly notes: ? recommended solder is ausn (80/20) solder. refer to crees website for the eutectic die bond procedure application note at http://www.cree.com/~/media/files/cree/rf/application%20notes/appnote%202%20eutectic.pdf ? vacuum collet is the preferred method of pick-up. ? the backside of the die is the source (ground) contact. ? die back side gold plating is 5 microns thick minimum. ? thermosonic ball or wedge bonding are the preferred connection methods. ? gold wire must be used for connections. ? use the die label (xx-yy) for correct orientation. CMPA1D1E030D rev 0, preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
5 part number system parameter value units lower frequency 13.75 ghz upper frequency 1 14.5 ghz power output 30 w package bare die - table 1. note 1 : alpha characters used in frequency code indicate a value greater than 9.9 ghz. see table 2 for value. character code code value a 0 b 1 c 2 d 3 e 4 f 5 g 6 h 7 j 8 k 9 examples: 1a = 10.0 ghz 2h = 27.0 ghz table 2. package power output (w) upper frequency (ghz) lower frequency (ghz) cree mmic power amplifer product line CMPA1D1E030D CMPA1D1E030D rev 0, preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
6 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for its use or for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications, and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. cree and the cree logo are registered trademarks of cree, inc. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing & export cree, rf components 1.919.407.5302 ryan baker marketing cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639 CMPA1D1E030D rev 0, preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
|
